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Mtron to Showcase Live Demos and Advanced RF Solutions at IMS 2025

News from Everything RF

1 week ago

Mtron is headed to IMS 2025, taking place June 17–19, 2025, at the Moscone Center in San Francisco, CA, where they will be showcasing innovation, expertise, and high-performance RF technology t..

Husnain Nawaz
Impedance Matching Analytical 1

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1 week ago

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1 week ago

RF Mentor Videos
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1 week 2 days ago

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Filtronic Secures Contract with Airbus for Constellation Satellites

Microwave Journal Magazine

1 week 3 days ago

Filtronic has been awarded a new contract to supply filter and diplexer assemblies to Airbus Defence and Space, supporting the production of additional satellites for Eutelsat OneWeb.
FAMES Pilot Line Launches FAMES Academy to Train Europe’s Chip Engineers with Skills

Microwave Journal Magazine

1 week 3 days ago

The FAMES Pilot Line announced the official launch of the FAMES Academy, a strategic educational initiative designed to support the EU’s commitment to develop next-generation chips.
MVG Introduces New Multi-Probe Array for Faster Calibration of Active Phased Arrays

News from Everything RF

1 week 3 days ago

Microwave Vision Group (MVG)has introduced theSpeedProbe DL, a dual linear polarized multi-probe array designed to significantly enhance active phased array calibration speed in planar and cylindrica..

Alex
TagoreTech to Showcase Latest GaAs & GaN Based Innovation at the IMS 2025

News from Everything RF

1 week 3 days ago

TagoreTech, a leader in disruptive semiconductor solutions and a pioneer in Gallium Nitride-on-Silicon (GaN-on-Si) technology for RF and power management applications, is set to participate in the IE..

Mayank Sharma
indie Semiconductor Introduces New 240 GHz Radar Front-End Transceiver with an On-Chip Antenna

News from Everything RF

1 week 3 days ago

indie Semiconductor has announced the release of its latest product, the TRA_240_097 radar front-end—an integrated transceiver circuit operating in the 240 GHz band with an on-chipantenna. Desi..

Kasyap Suresh
Sumitomo and Osaka Metropolitan University Fabricate GaN HEMT on a 2-inch Polycrystalline Diamond

News from Everything RF

1 week 3 days ago

Japan’s Sumitomo Electric Industries Ltd (SEI) and Osaka Metropolitan University (OMU) have fabricated a gallium nitride high-electron mobility transistor (GaN HEMT) on a 2-inch polycrystalline..

Kasyap Suresh

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Industry News Latest

Mtron to Showcase Live Demos and Advanced RF Solutions at IMS 2025

Impedance Matching Analytical 1

Impedance admittance conversion

dB Approximation

Filtronic Secures Contract with Airbus for Constellation Satellites

FAMES Pilot Line Launches FAMES Academy to Train Europe’s Chip Engineers with Skills

MVG Introduces New Multi-Probe Array for Faster Calibration of Active Phased Arrays

TagoreTech to Showcase Latest GaAs & GaN Based Innovation at the IMS 2025

indie Semiconductor Introduces New 240 GHz Radar Front-End Transceiver with an On-Chip Antenna

Sumitomo and Osaka Metropolitan University Fabricate GaN HEMT on a 2-inch Polycrystalline Diamond