Guerrilla RF Develops New 150 W Discrete GaN-on-SiC HEMT Power Transistor from DC to 3.2 GHz
Guerrilla RF has developed the GRF0150, an unmatched discrete GaN-on-SiC HEMT power transistor that delivers 150 W of output power at P3dB over a broad frequency range from DC to 3.2 GHz. The device ..